| PART |
Description |
Maker |
| TX2-12V |
TX-relay. 2 Amp. High capacity relay with high surge voltage & high breakdown voltage. Standard PC board terminal. Single side stable. Nominal voltage 12 V DC.
|
Panasonic / NAiS
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| 2SC3675 |
900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
High-Voltage Amp, High-Voltage Switching Applications
High-Voltage Amp High-Voltage Switching Applications
High-Voltage Amp/ High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC4637LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/15mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications
900V/100mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings
KEC(Korea Electronics)
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| FJP5021NBSP FJP5021 FJP5021Y FJP5021RTU FJP5021RVT |
NPN Silicon Transistor
High Voltage and High Reliability
From old datasheet system
High Speed Switching : tF = 0.1μs (Typ.)
|
FAIRCHILD[Fairchild Semiconductor]
|
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| MSK610 MSK610-15 MSK610B |
VERY WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
Ultra Low Quiescent Current - ±12mA for High Voltage Stage
|
Anaren Microwave
M.S. Kennedy Corporatio...
|
